52A, 60V, RDS(on) = 0.022Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF) Special sealed bag packaging, easy to take 175°C maximum junction temperature rating These N-Channel enhancement mode power field effect transistors are produced proprietary,planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Maximum Continuous Drain Current:50A
Maximum Drain Source Voltage:60V
Maximum Drain Source Resistance:21 mΩ
Minimum Gate Threshold Voltage:1V
Maximum Gate Source Voltage:-20 V, +20 V
Maximum Power Dissipation:121 W
Minimum Operating Temperature:-55 °C
Maximum Operating Temperature:+175 °C
Package include:
10pcs*FQP50N06
These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Maximum Continuous Drain Current:50A
Maximum Drain Source Voltage:60V
Maximum Drain Source Resistance:21 mΩ
Minimum Gate Threshold Voltage:1V
Maximum Gate Source Voltage:-20 V, +20 V
Maximum Power Dissipation:121 W
Minimum Operating Temperature:-55 °C
Maximum Operating Temperature:+175 °C
Package include:
10pcs*FQP50N06