Product Description:
The CS20N60F A9H is a high-performance Silicon N-Channel Power MOSFET designed for power switching applications, enhancing system efficiency and miniaturization.
Key Features:
- Fast Switching
- Low ON Resistance (Rdson ≤ 0.45Ω)
- Low Gate Charge (Typical: 61nC)
- Low Reverse Transfer Capacitances (Typical: 20pF)
- 100% Single Pulse Avalanche Energy Tested
Applications: Ideal for power switch circuits in adaptors and chargers.
Electrical Characteristics:
- Drain-to-Source Voltage (VDSS): 600V
- Continuous Drain Current (ID): 20A
- Gate-to-Source Voltage (VGS): ±30V
- Avalanche Energy (EAS): 1200mJ (Single Pulse)
- Diode Recovery dv/dt: 5.0V/ns
- Power Dissipation: 85W
Resistive Switching Characteristics:
- Turn-on Delay Time (td(ON)): Typically 36ns
- Rise Time (tr): Typically 73ns
- Turn-Off Delay Time (td(OFF)): Typically 166ns
- Fall Time (tf): Typically 73ns
- Total Gate Charge (Qg): 61nC
Source-Drain Diode Characteristics:
- Continuous Source Current (IS): -- 20A
- Diode Forward Voltage (VSD): 1.5V
- Reverse Recovery Time (trr): 425ns
Therermal Characteristics:
- Junction-to-Case Thermal Resistance (RθJC): 1.47℃/W
- Junction-to-Ambient Thermal Resistance (RθJA): 100℃/W
Safety and Environmental: Compliant with RoHS standards and SJ/T11363-2006 hazardous substance limits.
Warnings:
- Use within 80% of maximum ratings for reliability.
- Be cautious with heatsink installation to avoid damage.
- Protect from static electricity due to sensitivity.
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