Transistor Type: Bipolar Junction NPN Transistor known for high voltage and moderate current handling. Transistor Polarity: NPN Bipolar Joint Transistor for facilitating power switching and amplification in electronics. Specifications: Handles Vcbo up to 180V, Vceo up to 160V, Vebo up to 6V, Ic up to 0.6A, and Ft up to 100 MHz. Applications: Ideally used for switching and signal amplification in various electronic circuits, providing effective power management and control. Package: Enclosed in a TO-92 package with an Anti-Static bag for electrostatic protection, ensuring ESD safety and a longer shelf life.

Product Description:
This TO-92 Plastic-Encapsulate Transistor is an NPN type, designed for general-purpose switching applications.
Key Features:
- Collector-Base Breakdown Voltage: 180V
- Collector-Emitter Breakdown Voltage: 160V
- Emitter-Base Breakdown Voltage: 6V
- Collector Cut-Off Current: 50nA
- Emitter Cut-Off Current: 50nA
- DC Current Gain (hFE): Ranges from 80 to 300 depending on the collector current
- Saturation Voltage (VCE(sat)): 0.15V at 10mA, 0.2V at 50mA
- Base-Emitter Saturation Voltage (VBE(sat)): 1V
- Collector Output Capacitance (Cob): 6pF at 1MHz
- Emitter Input Capacitance (Cib): 20pF at 1MHz
- Transition Frequency (fT): Between 100MHz and 300MHz
Operational Conditions:
- Collector Current (IC): Up to 0.6A
- Collector Power Dissipation (PC): Maximum 625mW
- Thermal Resistance (RθJA): 200℃/W from junction to ambient
- Junction Temperature (Tj): Maximum 150℃
- Storage Temperature (Tstg): Ranges from -55℃ to +150℃
Package Details:
- TO-92 package with pin configuration: Emitter (1), Base (2), Collector (3)
- Outline dimensions and suggested pad layout provided for easy integration
Pulse Test Conditions:
- Pulse width ≤ 300μs, duty cycle ≤ 2.0%
Classification of hFE:
- Rank A: 80-100
- Rank B: 100-150
- Rank C: 150-200
This transistor is perfect for a variety of electronic projects requiring reliable switching capabilities.