Product Description:
This N-Channel HEXFET Power MOSFET is designed for high power applications, featuring a TO-220 package that is universally preferred for commercial-industrial uses up to 50 watts. With its low thermal resistance and cost-effective design, it ensures efficient heat dissipation and wide industry acceptance.
Key Features:
- Continuous Drain Current (ID): Up to 9.7A at 25°C, 6.8A at 100°C
- Power Dissipation (PD) at 25°C: 48W
- Thermal Resistance: Junction-to-Case (RθJC) - 3.1°C/W, Case-to-Sink (RθCS) - 0.50°C/W
- Operating Junction Temperature: -55 to +175°C
- Storage Temperature Range: -55 to +175°C
- Absolute Maximum Ratings:
- Gate-to-Source Voltage (VGS): ±20V
- Avalanche Energy Ratings: Single Pulse (EAS) - 91mJ, Repetitive (EAR) - 4.8mJ
- Switching Characteristics:
- Turn-On Delay Time (td(on)): Typically 4.5ns
- Rise Time (tr): Typically 23ns
- Turn-Off Delay Time (td(off)): Typically 32ns
- Fall Time (tf): Typically 23ns
- Diode Characteristics:
- Diode Forward Voltage (VSD): Typically 1.3V at 25°C, IS = 5.7A, VGS = 0V
- Reverse Recovery Time (trr): 99 to 150ns
- Capacitance Ratings:
- Input Capacitance (Ciss): Up to 330pF
- Output Capacitance (Coss): 92pF
- Reverse Transfer Capacitance (Crss): 54nH at 1.0MHz
Package: TO-220AB
Mounting Torque: 10 lbfin (1.1Nm) for 6-32 or M3 screw
Soldering Temperature: 300°C for 10 seconds (1.6mm from case)
Lead-Free: Yes