Transistor Type: NMOS N-Channel Power MOSFET Transistor. Transistor Polarity: N-Channel with power dissipation (PD) of 140W. Specification: Supports drain current (ID) of 80A at case temperature (Tc) of 25 ℃, drain-source voltage (VDSS) of 75V, and drain-source resistance (RDS(on)) of 0.009 Ω. Application: Suitable for a wide range of high-power applications, including power supplies, motor control, and lighting control. Package: Comes in TO-220AB packaging with 10 units per pack. Each pack is enclosed in an Anti-Static bag for electrostatic protection, ensuring ESD safety and long shelf life.

Product Description:
This high-performance N-Channel Power MOSFET is designed for high efficiency synchronous rectification in Switched Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and high-speed power switching applications.
Key Features:
- Improved Gate, Avalanche, and Dynamic dv/dt ruggedness
- Enhanced body diode dV/dt and dI/dt capability
- Fully characterized capacitance and avalanche safe operating area (SOA)
Specifications:
- Voltage Drain-to-Source (VDSS): 75V
- On-Resistance (RDS(on)) Typical: 7.34mΩ, Max: 9.0mΩ
- Continuous Drain Current (ID): 80A
- Gate-to-Source Voltage (VGS): 10V
- Thermal Resistance Junction-to-Case (RθJC): Typical 1.045°C/W
- Maximum Power Dissipation (PD) at 25°C: 300W
- Storage Temperature Range: -55°C to +175°C
Diode Characteristics:
- Continuous Source Current (IS): 80A (Body Diode)
- Pulsed Source Current (ISM): 310A (Body Diode)
- Forward Voltage (VSD): 1.3V
- Peak Diode Recovery dv/dt: 27V/ns
Dynamic Parameters:
- Forward Transconductance (gfs): Typical 115 S
- Total Gate Charge (Qg): 56nC
- Internal Gate Resistance (RG(int)): 0.55Ω
- Turn-On Delay Time (td(on)): Typical 16ns
- Rise Time (tr): Typical 110ns
- Fall Time (tf): Typical 96ns
Capacitance Values:
- Input Capacitance (Ciss): 3070pF
- Output Capacitance (Coss): 280pF
- Reverse Transfer Capacitance (Crss): 130pF
- Effective Output Capacitance (Coss eff. (ER)): 380pF
- Effective Output Capacitance (Coss eff. (TR)): 610pF
Avalanche Characteristics:
- Single Pulse Avalanche Energy (EAS): Up to 310mJ
- Repetitive Avalanche Energy (EAR): Up to 56mJ
- Avalanche Current (IAR): Up to 46A
Operating Conditions:
- Junction Temperature (TJ) Range: -55°C to 175°C