Transistor Type: High Power NMOS N-Channel Power MOSFET Transistor. Transistor Polarity: NMOS N-Channel, enhances the efficiency of current flow. Specification: Features high dissipation power (PD) of 190W and drain current (ID) of 30A. Withstand drain-source voltage (VDSS) of 200V and drain-source resistance (RDS(on)) of 0.085 Ω. Application: Ideal for high-power switching and amplification needs in various circuits, especially suitable for power supplies and motor controls. Package: Provided in TO-247 packaging, with each set containing 5 pieces. Each pack comes in an anti-static bag for electrostatic protection, ensuring ESD safety and prolonged shelf life.

Product Description:
The IRFP250N is a high-performance N-Channel power transistor designed for applications requiring high power levels, making it suitable for commercial-industrial use.
Key Features:
- Continuous Drain Current: Up to 30A at 25°C and 21A at 100°C
- Power Dissipation: 214W at 25°C with a linear derating factor of 1.4W/°C
- Avalanche Ratings: Single Pulse Avalanche Energy of 315mJ and Repetitive Avalanche Energy of 21mJ
- Operating Temperature: -55°C to +175°C
- Mounting Torque: 10 lbfin (1.1Nm) for 6-32 or M3 screw
- Thermal Resistance: Junction-to-Case (RθJC) and Case-to-Sink (RθCS) for efficient heat dissipation
- Absolute Maximum Ratings: VDSS of 200V and RDS(on) of 0.075Ω
- Switching Characteristics: Fast switching with a typical turn-on delay time of 14ns and a fall time of 33ns
- Body Diode: Integral reverse p-n junction diode with a forward voltage of 1.3V and a reverse recovery time of 186ns
Package: TO-247, preferred for higher power applications with an isolated mounting hole for enhanced performance.
Storage Temperature: -55°C to +175°C
Soldering Temperature: 300°C for 10 seconds at a distance of 1.6mm from the case
Typical Applications: Ideal for use in power electronics, motor drives, and high-power switching applications.